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DAP222FH
Switching Diode (High speed switching)
(AEC-Q101 qualified) Data sheet
●Outline
VRM
80
V
IFM
Io
r IFSM fo ●Features
High reliability
d Small mold type
High speed switching
300
mA
100
mA
4000
mA
●Inner Circuit
nde s ●Application e n High speed switching
m ig ●Structure s Epitaxial planar
m e ●Absolute Maximum Ratings (Ta = 25ºC)
o D Parameter
Symbol
Reverse voltage
VR
c Repetitive peak reverse voltage
VRM
e Average rectified forward current
Io
w Forward current
IFM
R e Peak forward surge current
IFSM
Power dissipation *
PD
t N Junction temperature
Tj
Storage temperature
Tstg
o*2 elements total
N●Characteristics (Ta = 25ºC)
●Packaging Specifications
Packing
Embos