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Rohm Semiconductor Electronic Components Datasheet

C08N25 Datasheet

Nch 250V 8A Power MOSFET

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RCD080N25
Nch 250V 8A Power MOSFET
Data Sheet
VDSS
RDS(on) (Max.)
ID
PD
250V
300mW
8A
20W
lFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
5) Pb-free lead plating ; RoHS compliant
6) 100% Avalanche tested
lApplication
Switching Power Supply
Automotive Motor Drive
Automotive Solenoid Drive
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Tc = 25°C
Tc = 100°C
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Junction temperature
Tc = 25°C
Ta = 25°C *4
Range of storage temperature
lOutline
CPT3
(SC-63)
<SOT-428>
lInner circuit
(1) (2)
(3)
(1) Gate
(2) Drain
(3) Source
*1 BODY DIODE
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Taping
330
16
2,500
TL
C08N25
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
IAR *3
PD
PD
Tj
Tstg
Value
250
8.0
4.3
32
30
4.67
4.0
20
0.85
150
-55 to +150
Unit
V
A
A
A
V
mJ
A
W
W
°C
°C
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/12
2014.01 - Rev.B


Rohm Semiconductor Electronic Components Datasheet

C08N25 Datasheet

Nch 250V 8A Power MOSFET

No Preview Available !

RCD080N25
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient *4
Soldering temperature, wavesoldering for 10s
Data Sheet
Symbol
RthJC
RthJA
Tsold
Values
Min. Typ. Max.
Unit
- - 6.25 °C/W
- - 147 °C/W
- - 265 °C
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA
VDS = 250V, VGS = 0V
Zero gate voltage
drain current
Tj = 25°C
IDSS
VDS = 250V, VGS = 0V
Tj = 125°C
Gate - Source leakage current
IGSS VGS = 30V, VDS = 0V
Gate threshold voltage
VGS (th) VDS = 10V, ID = 1mA
Static drain - source
on - state resistance
VGS = 10V, ID = 4.0A
RDS(on) *5 VGS = 10V, ID = 4.0A
Tj = 125°C
Forward transfer admittance
gfs VDS = 10V, ID = 4.0A
Values
Min. Typ. Max.
250 -
-
- - 10
- - 100
- - 100
3.0 - 5.0
- 225 300
- 480 640
2.7 5.4
-
Unit
V
mA
nA
V
mW
S
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
2/12
2014.01 - Rev.B


Part Number C08N25
Description Nch 250V 8A Power MOSFET
Maker ROHM
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C08N25 Datasheet PDF






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