logo

BS2100F Datasheet, ROHM

BS2100F driver equivalent, 600v high voltage high & low-side / gate driver.

BS2100F Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 812.97KB)

BS2100F Datasheet

Features and benefits


* Floating Channels for Bootstrap Operation to +600V
* Gate drive supply range from 10V to 18V
* Built-in Under Voltage Lockout for Both Channels
* 3.3V a.

Application


* MOSFET and IGBT high side driver applications Key Specifications
* High-side floating supply voltage: 600V .

Description

The BS2100F is a monolithic high and low side gate drive IC, which can drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to driven an N-channel power MOSFET or IGBT in the high side configuration.

Image gallery

BS2100F Page 1 BS2100F Page 2 BS2100F Page 3

TAGS

BS2100F
600V
High
voltage
High
Low-side
Gate
Driver
ROHM

Manufacturer


ROHM (https://www.rohm.com/)

Related datasheet

BS2101F

BS2103F

BS2114F

BS2130F-G

BS200

BS204

BS208

BS209

BS223

BS2320-7R

BS248

BS250

BS250CSM4

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts