* Floating Channels for Bootstrap Operation to +1200V.
* Gate drive supply range from 10V to24V
* Built-in Under Voltage Lockout for Both Channels
* 3.3V .

The BM60210FV-C is a monolithic high and low side gate drive IC, which can be drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to driven an N-channel power MOSFET or IGBT in the high side config.

BM60212FV-C

BM60213FV-C

BM60013FV-C

BM60014FV-C

BM60015FV-LB

BM60016FV-C

BM60051FV-C

BM60052FV-C

BM60054FV-C

BM60055FV-C

BM60056FV-C

BM60059FV-C

BM60060FV-C

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