SUF-8533 Datasheet | RF Micro Devices

Description RFMD’s SUF-8533 is a monolithically matched high IP3 broadband p HEMT MMIC amplifier covering DC to 12 GHz. This p HEMT FET based amplifier uses a self-bias Darlington topology featuring a gain and temperature pensating active bias network that operates from a single 5 V supply. It offers efficiency, cascadable performance in a pact 3 mm x 3 mm Ceramic QFN package. It is well suited for RF, LO, and IF driver applications. Optimum Technology Matching® Applied Ga As HBT Ga As MESFET In Ga P HBT Si Ge Bi CMOS Si Bi CMOS Si Ge HBT Ga As p HEMT Si CMOS Si BJT Ga N HEMT In P HBT RF MEMS LDMOS Features - - - - - - Broadband Performance Gain = 15.4 d B at 3 GHz P1d B = 16.7 d Bm at 3 GHz Low-Noise, Efficient Gain Block 5 V Single Supply Operation Low Gain Variation versus Temperature Applications - - - - - Broadband munications Test Instrumentation Military and Space LO and IF Mixer Applications High IP3 RF Driver Applications Parameter Frequency of Operation Small Signal Power Gain,...