SPA2318Z amplifier equivalent, power amplifier.
* High Linearity Performance: +21dBm IS-95 Channel Power at -55dBc ACP; +20.7dBm WCDMA Channel Power at -50dBc ACP; +47dBm Typ. OIP3
* On-Chip Active Bias Control.
The matte tin finish on the
lead-free package utilizes a post annealing process to mitigate tin whisker forma-
Optimu.
RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT)
amplifier housed in a low-cost surface-mountable plastic package. These HBT
amplifiers are fabricated using molecular beam epitaxial growth technology which
produce.
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