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SPA2118Z - POWER AMPLIFIER

General Description

RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package.

Key Features

  • High Linearity Performance.
  • +20.7dBm, IS-95 CDMA Channel Power at -55dBc ACP.
  • +47dBm Typ. OIP3.
  • High Gain: 33dB Typ.
  • On-Chip Active Bias Control.
  • Patented high Reliability GaAs HBT Technology.
  • Surface-Mountable Plastic Package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias SPA2118Z 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 850MHz band. Its high linearity makes it an ideal choice for multi-carrier and digital applications.