* High Linearity Performance
* +20.7dBm, IS-95 CDMA Channel Power at -55dBc ACP
* +47dBm Typ. OIP3
* High Gain: 33dB Typ.
* On-Chip Active Bias Contro.

Optimum Technology Matching® Applied  GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMO.

RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces re.

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