Datasheet4U Logo Datasheet4U.com

SGA9189Z - Medium Power Discrete SiGe Transistor

General Description

RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz.

With optimal matching at 2GHz, OIP3 = 39dBm, and P1dB = 25.5dBm.

This RF device is based on a silicon germanium heterostructure bipolar transistor (SiGe HBT) process.

Key Features

  • 50MHz to 3000MHz Operation.
  • 39dBm Output IP3 Typ. at 1.96GHz.
  • 12.2dB Gain Typ. at 1.96GHz.
  • 25.5dBm P1dB Typ. at 1.96GHz.
  • 2.1dB NF Typ. at 0.9GHz.
  • Cost-Effective.
  • 3V to 5V Operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SGA ARINC 600 Rack and Panel Connectors ITT Industries
SGA-0163 Silicon Germanium Cascadeable Gain Block Sirenza Microdevices
SGA-0163Z Silicon Germanium Cascadeable Gain Block Sirenza Microdevices
SGA-0363 Silicon Germanium Cascadeable Gain Block Sirenza Microdevices
SGA-0363Z Silicon Germanium Cascadeable Gain Block Sirenza Microdevices

Other Datasheets by RF Micro Devices (now Qorvo)

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SGA9189Z Medium Power Discrete SiGe Transistor SGA9189Z Medium Power Discrete SiGe Transistor Package: SOT-89 Product Description RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 = 39dBm, and P1dB = 25.5dBm. This RF device is based on a silicon germanium heterostructure bipolar transistor (SiGe HBT) process. The SGA9189Z is cost-effective for applications requiring high linearity even at moderate biasing levels. It is well suited for operation at both 5V and 3V. The matte tin finish on the lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95.