• Part: RF3928
  • Description: 300W GaN Wide-Band Pulsed Power Amplifier
  • Manufacturer: RF Micro Devices
  • Size: 1.25 MB
Download RF3928 Datasheet PDF
RF Micro Devices
RF3928
Features - Wideband Operation 2.8GHz to 3.4GHz - Advanced Ga N HEMT Technology - Advanced Heat-Sink Technology - Optimized Evaluation Board Layout for 50ohm Operation - Integrated matching ponents for high terminal impedances - 50V Operation Typical Performance o Pulsed Output Power 300W o Small Signal Gain 11d B o Drain Efficiency 50% o -40o C to 85o C Operating Temperature Applications - Radar - Air Traffic Control and Surveillance - General Purpose Broadband Amplifiers RF IN VG Pin 1 (CUT ) RF OUT VD Pin 2 GND BASE Functional Block Diagram Product Description The RF3928 is a 50V 300W high power discrete amplifier designed for S-Band pulsed radar, Air Traffic Control and Surveillance and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (Ga N) semiconductor process, these high-performance amplifiers achieve high output power, high efficiency and flat gain over a broad frequency range in a single package. The RF3928 is a matched Ga N...