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RF3826 - 9W GaN WIDEBAND

Datasheet Summary

Description

The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification.

Features

  • VGS Pin 1 Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 30MHz to 2500MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance POUT 39.5dBm.
  • Gain 12dB.
  • Power Added Efficiency 45% (30MHz to 2500MHz).
  • Power Added Efficiency 50% (200MHz to 1800MHz) -40°C to 85°C Operating Temperature.
  • RF IN Pin 2,3 RF OUT / VDS Pin 6,7.
  • GND BASE Functional Block Diagram Product Descript.

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Datasheet preview – RF3826

Datasheet Details

Part number RF3826
Manufacturer RF Micro Devices
File Size 1.30 MB
Description 9W GaN WIDEBAND
Datasheet download datasheet RF3826 Datasheet
Additional preview pages of the RF3826 datasheet.

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Full PDF Text Transcription

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RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier RF3826 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 Features     VGS Pin 1 Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 30MHz to 2500MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance POUT 39.5dBm  Gain 12dB  Power Added Efficiency 45% (30MHz to 2500MHz)  Power Added Efficiency 50% (200MHz to 1800MHz) -40°C to 85°C Operating Temperature  RF IN Pin 2,3 RF OUT / VDS Pin 6,7   GND BASE Functional Block Diagram Product Description The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification.
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