RF3826 Datasheet 9W GaN WIDEBAND

Manufacturer: RF Micro Devices (now Qorvo)

RF3826 9w gan wideband by RF Micro Devices (now Qorvo) - Datasheet Preview

Datasheet Details

Part number	RF3826
Manufacturer	RF Micro Devices (now Qorvo)
File Size	1.30 MB
Description	9W GaN WIDEBAND
Datasheet	RF3826 Datasheet

General Description

The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification.

Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain and large instantaneous bandwidth in a single amplifier design.

The RF3826 is an input matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies.

Overview

RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier RF3826 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier /.

Key Features

VGS Pin 1 Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 30MHz to 2500MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance POUT 39.5dBm.
Gain 12dB.
Power Added Efficiency 45% (30MHz to 2500MHz).
Power Added Efficiency 50% (200MHz to 1800MHz) -40°C to 85°C Operating Temperature.
RF IN Pin 2,3 RF OUT / VDS Pin 6,7.
GND BASE Functional Block Diagram Product Descript.

More Datasheets from RF Micro Devices (now Qorvo)

Part Number	Description
RF3827	LINEAR GENERAL PURPOSE AMPLIFIER
RF3800	GaAs HBT PRE-DRIVER AMPLIFIER
RF3800PCBA-416	GaAs HBT PRE-DRIVER AMPLIFIER
RF3802	GaAs HBT PRE-DRIVER AMPLIFIER
RF3802PCBA-410	GaAs HBT PRE-DRIVER AMPLIFIER
RF3802PCBA-411	GaAs HBT PRE-DRIVER AMPLIFIER
RF3805	GaAs HBT PRE-DRIVER AMPLIFIER
RF3805PCBA-411	GaAs HBT PRE-DRIVER AMPLIFIER
RF3805PCBA-412	GaAs HBT PRE-DRIVER AMPLIFIER
RF3805PCBA-413	GaAs HBT PRE-DRIVER AMPLIFIER