RF3826 Datasheet | RF Micro Devices

RF3826 30MHz to 2500MHz, 9W Ga N Wideband Power Amplifier 30MHz TO 2500MHz, 9W Ga N WIDEBAND POWER AMPLIFIER Package: Al N Leadless Chip Carrier / SO8 Features - - - - VGS Pin 1 Advanced Ga N HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 30MHz to 2500MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance POUT 39.5d Bm - Gain 12d B - Power Added Efficiency 45% (30MHz to 2500MHz) - Power Added Efficiency 50% (200MHz to 1800MHz) -40°C to 85°C Operating Temperature - RF IN Pin 2,3 RF OUT / VDS Pin 6,7 - - GND BASE Functional Block Diagram Product Description The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (Ga N) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain and large instantaneous bandwidth in a single amplifier design. The RF3826 is an input matched Ga N transistor packaged in an air cavity ceramic package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is acplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth. .Data Sheet.net/ - - Large Signal Models Available Applications - Class AB Operation for Public Mobile Radio Power Amplifier Stage for mercial Wireless Infrastructure General Purpose Tx Amplification Test and Instrumentation Civilian and Military Radar - - - - Optimum Technology Matching® Applied Ga As HBT Ga As MESFET In Ga P HBT Si Ge Bi CMOS Si Bi CMOS Si Ge HBT Ga As p HEMT Si CMOS Si BJT - Ga N HEMT Bi FET HBT RF MICRO DEVICES®, RFMD®,...