Part RF3826
Description 9W GaN WIDEBAND
Manufacturer RF Micro Devices
Size 1.30 MB
RF Micro Devices
RF3826

Overview

  • VGS Pin 1 Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 30MHz to 2500MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance POUT 39.5dBm
  • Gain 12dB
  • Power Added Efficiency 45% (30MHz to 2500MHz)
  • Power Added Efficiency 50% (200MHz to 1800MHz) -40°C to 85°C Operating Temperature
  • RF IN Pin 2,3