RF2145 Datasheet | RF Micro Devices

Description The RF2145 is a high power, high efficiency amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in a 4-cell DCS1800 or DCS1900 handset. The device is packaged in a 16-lead plastic package with wide ground leads, and is self-contained with the exception of the output matching network and power supply feed line. Only a single positive voltage is required to operate with full power and efficiency, and on-board power control and power-down functions are provided. Optimum Technology Matching® Applied Si BJT üGa As HBT Ga As MESFET Si Bi-CMOS Si Ge HBT Si CMOS PC 1 GND 2 GND 3 VCC1 4 RF IN 5 GND 6 GND 7 NC 8 16 NC...