SGC4263Z
SGC4263Z is 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK manufactured by RF Micro Devices.
Description
RFMD’s SGC4263Z is a high performance Si Ge HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the SGC4263Z does not require a dropping resistor as pared to typical Darlington amplifiers. The SGC4263Z is designed for high linearity 3V gain block applications that require small size and minimal external ponents. It is internally matched to 50.
Optimum Technology Matching® Applied
Ga As HBT Ga As MESFET In Ga P HBT Si Ge Bi CMOS Si Bi CMOS
- Si Ge HBT
Ga As p HEMT Si CMOS Si BJT Ga N HEMT RF MEMS d B
Gain, RL and NF versus Frequency
20 S21 10
0 Bias Tee Data, ZS = ZL = 50 Ohms, TL
-10
-20
-30 0.0
S22 S11
0.5 1.0 1.5 2.0 2.5
Frequency (GHz)
Gain IRL ORL 3.0 3.5
Features
- Single Fixed 3V Supply
- No Dropping Resistor
Required
- Patented Self-Bias Circuitry
- P1d B=15.1d Bm at 1950MHz
- OIP3=30d Bm at 1950MHz
- Robust 1000V ESD, Class 1C
Applications
- PA Driver Amplifier
- Cellular, PCS, GSM, UMTS,
WCDMA
- IF Amplifier
- Wireless Data, Satellite
Parameter
Specification Min. Typ. Max.
Unit
Condition
Small Signal Gain, (G)
15.0 d B...
