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SGA1263Z - DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK

Description

RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain response for application to 4GHz.

Features

  • DCto4000MHz Operation.
  • Single Supply Voltage.
  • Excellent Isolation, >50dB at 900 MHz.
  • 50 In/Out, Broadband Match for Operation from DC4 GHz.
  • Unconditionally Stable.

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Datasheet Details

Part number SGA1263Z
Manufacturer RFMD
File Size 379.80 KB
Description DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK
Datasheet download datasheet SGA1263Z Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SGA1263Z DC to 4000 MH z Silicon Germanium HBT Cascadable Gain Block SGA1263Z DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain response for application to 4GHz. This RFIC is a 2-stage design that provides high isolation of up to 40dB at 2GHz and is fabricated using the latest SiGe HBT 50GHz FT process, featuring one-micron emitters with VCEO>7V. These unconditionally stable amplifiers have less than 1dB gain drift over 125°C operating range (-40°C to +85°C) and are ideal for use as buffer amplifiers in oscillator applications covering Optimum Technology cellular, ISM, and narrowband PCS bands.
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