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RFMD

SGA-1263Z Datasheet Preview

SGA-1263Z Datasheet

DC to 4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK

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SGA-1263(Z)
DC to 4000 MH
z Silicon Ger-
manium HBT
Cascadable
Gain Block
SGA-1263(Z)
DCto4000MHz SILICON GERMANIUM HBT
CASCADABLE GAIN BLOCK
Package: SOT-363
Product Description
RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar
Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain
response for application to 4GHz. This RFIC is a 2-stage design that pro-
vides high isolation of up to 40dB at 2GHz and is fabricated using the lat-
est SiGe HBT 50GHz FT process, featuring one-micron emitters with
VCEO>7V. These unconditionally stable amplifiers have less than 1dB gain
drift over 125°C operating range (-40°C to +85°C) and are ideal for use
as buffer amplifiers in oscillator applications covering
Optimum Technology cellular, ISM, and narrowband PCS bands.
Matching® Applied
GaAs HBT
GaAs MESFET
Isolation vs. Frequency
InGaP HBT
0
SiGe BiCMOS
Si BiCMOS
9 SiGe HBT
GaAs pHEMT
-2 0
dB
-4 0
Si CMOS
-6 0
Si BJT
GaN HEMT
-8 0
InP HBT
RF MEMS
LDMOS
Frequency MHz
Features
„ DCto400MHz Operation
„ Single Supply Voltage
„ Excellent Isolation, >50dB at
900 MHz
„ 50W In/Out, Broadband
Match for Operation from DC-
4 GHz
„ Unconditionally Stable
Applications
„ Buffer Amplifier for Oscillator
Applications
„ Broadband Gain Blocks
„ IF Amp
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
15 17 19 dB 850MHz
12 15 17 dB 1950MHz
Output Power at 1dB Compression
-13.0
-9.5
dBm
1950 MHz
Output Third Order Intercept Point
-1.5
1.0
dBm
1950 MHz
Determined by Return Loss (<-10dB)
MHz
Input Return Loss
9.5 11.2
dB 1950MHz
Output Return Loss
78
dB 1950MHz
Noise Figure
2.5 4.0 dB 1950MHz
Device Voltage
2.5 2.8 3.1 V
Thermal Resistance
255 °C/W
Test Conditions: VS=5V, ID=8mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-20dBm, RBIAS=270Ω, TL=25°C, ZS=ZL=50Ω
DS090924
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 6




RFMD

SGA-1263Z Datasheet Preview

SGA-1263Z Datasheet

DC to 4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK

No Preview Available !

SGA-1263(Z)
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (ID)
20 mA
Max Device Voltage (VD)
5V
Max RF Input Power
-12 dBm
Max Junction Temperature (TJ)
+150
°C
Operating Temperature Range (TL)
-40 to +85
°C
Max Storage Temperature
+150
°C
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Parameter
Bandwidth
Frequency Range
Device Bias
Operating Voltage
Operating Current
500 MHz
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
850 MHz
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
1950 MHz
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
2400 MHz
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
Min.
DC
Specification
Typ.
2.8
8
16.0
2.7
4.0
-6.9
8.5
61.6
15.7
2.7
2.6
-7.8
8.9
48.4
14.7
3.0
2.8
-7.4
8.8
35.6
14.2
2.8
0.2
-7.0
8.4
33.6
Max.
4000
Unit
MHz
V
mA
dB
dB
dBm
dBm
dB
dB
dB
dB
dBm
dBm
dB
dB
dB
dB
dBm
dBm
dB
dB
dB
dB
dBm
dBm
dB
dB
T = 25°C
T = 25°C
T = 25°C
T = 25°C
T = 25°C
T = 25°C
Condition
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS090924


Part Number SGA-1263Z
Description DC to 4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK
Maker RFMD
Total Page 6 Pages
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