RFPA3800 Datasheet | RF Micro Devices

Features - 5W Output Power (P1d B) - High Linearity: OIP3>48d Bm - High Efficiency - Low Noise: NF=3.2d B at 945 MHz - 5V to 7V Operation - Thermally Enhanced Slug Package Applications - Ga As Driver for Base Station Amplifiers - PA Stage for mercial Wireless Infrastructure - Final Stage PA in Femtocell and Repeater Applications - Final Stage PA in High Efficiency, High Power Applications - Class AB Operation for LTE and GSM Transceiver Applications Functional Block Diagram Product Description The RFPA3800 is a single-stage Ga As HBT power amplifier specifically designed for high power, high efficiency applications. It is also well-suited for Wireless Infrastructure linear power amplifier applications. The RFPA3800 can be optimized for linear or saturated operation by varying the quiescent bias point and load line. It also offers low noise figure making it an excellent solution for 2nd and 3rd stage LNAs. The RFPA3800 exhibits excellent thermal performance through the use of a thermally-enhanced plastic surface-mount slug package. DS140819 Ordering Information RFPA3800SQ Sample bag with 25 pieces RFPA3800SR 7” Reel with 100 pieces RFPA3800TR7 7” Reel with 750 pieces RFPA3800TR13 13” Reel with 2500 pieces RFPA3800PCK-410 450MHz to 470MHz PCBA with 5-piece Sample Bag RFPA3800PCK-411 920MHz to 960MHz PCBA with 5-piece Sample Bag - Ga As HBT Optimum Technology Matching® Applied Si Ge Bi CMOS Ga As p HEMT Ga N HEMT Ga As MESFET Si Bi CMOS Si CMOS Bi FET HBT In Ga P HBT Si Ge HBT Si BJT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, Power Star®, POLARIS™ TOTAL RADIO™ and Ultimate Blue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices,...