• Part: RF3931
  • Description: 30W GaN WIDE-BAND POWER AMPLIFIER
  • Manufacturer: RF Micro Devices
  • Size: 536.60 KB
Download RF3931 Datasheet PDF
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Datasheet Summary

30W GaN WIDE-BAND POWER AMPLIFIER Package Style: Flanged Ceramic Features - Broadband Operation DC to 3 GHz - Advanced GaN HEMT Technology - Advanced Heat-Sink Technology - Gain=15dB at 2GHz - 48V Operation Typical Performance - Output Power 30W at P3dB - Power Added Efficiency 65% - -40°C to 85°C Operation - EAR99 Export Control RF IN VGQ Pin 1 (CUT) GND BASE RF OUT VDQ Pin 2 Functional Block Diagram Applications - mercial Wireless Infrastructure - Cellular and WiMAX Infrastructure - General Purpose Broadband Amplifiers - Public Mobile Radios - Industrial, Scientific and Medical Product Description The RF3931 is a 48 V 30 W high power discrete amplifier designed for...