RTH35003-20D amplifier equivalent, gan doherty hybrid amplifier.
* GaN on SiC Chip on Board
* Surface Mount Hybrid Type
* 2-Stage Doherty Amplifier
* High Efficiency
* No Matching circuit needed
Applications
* .
* RF Sub-Systems
* Base Station
* RRH
*4G/ LTE system
* Small cell
Description
Package Type : SP-1.
Package Type : SP-1E
Accommodating the future of 4G/LTE small cells, RFHIC introduces RTH35003-20D amplifier fabricated using an advanced high power density Gallium Nitride (GaN) semiconductor process.
Electrical Specifications @ Vds=30V, Ta=25℃
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