RTH23007-10 amplifier equivalent, gan doherty hybrid amplifier.
* GaN on SiC Chip on Board
* Surface Mount Hybrid Type
* Asymmetric Doherty Amplifier
* High Efficiency
* No Matching circuit needed
Applications
* RF Sub-Systems
* Base Station
* RRH
* 4G/ LTE system
* Small cell
Package Type : NP-8CL
Descript.
Accommodating the future of 4G/LTE small cells, RFHIC introduces RTH23007-10 amplifier fabricated using an advanced high power density Gallium Nitride (GaN) semiconductor process. This high performance amplifier achieves high efficiency of 45%, and p.
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