RT550PD transistor equivalent, power transistor.
* High Output Power P1dB = 40dBm(typ)@2.3GHz
* High Efficiency
* High Power Gain G1dB = 10dB(typ) @2.3GHz
* High Linearity
* Hermetically sealed packa.
The RT550PD is designed for base stations and cell extenders as 300MHz ~ 3GHz.
Absolute Maximum Ratings
Parameter
Drain - Source Voltage Gate - Source Voltage Total Power Dissipation Storage Temperature Channel Temperature
Symbol
Vds Vgs Pt Tstg Tc.
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