Datasheet Details
| Part number | RFW1747-10 |
|---|---|
| Manufacturer | RFHIC |
| File Size | 173.83 KB |
| Description | Power Amplifier |
| Datasheet |
 RFW1747-10 Datasheet
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| Part number | RFW1747-10 |
|---|---|
| Manufacturer | RFHIC |
| File Size | 173.83 KB |
| Description | Power Amplifier |
| Datasheet |
RFW1747-10 Datasheet
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The power amplifier module is designed for base stations and cell extenders and operating frequency range is from 300MHz to 2.3GHz GaAs HFET is used and attached on a copper sub carrier.
It is connected by www.DataSheet4U.com using bias and in/out matching circuit method with gold wire bonding.
The bias and matching circuit are designed much simpler than other circuits for silicon IC’s, LDMOS because GaAs HFET is operated by low supply voltage whereas others are operated by high supply voltage.
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