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BC858A - PNP Transistor

Description

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Features

  • Power dissipation PCM : 0.225 W (Tamb=25OC) Note1.
  • Collector current ICM : -0.1 A.
  • Collector-base voltage V(BR)CBO : -30 V.
  • Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC.

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Datasheet Details

Part number BC858A
Manufacturer RECTRON
File Size 440.18 KB
Description PNP Transistor
Datasheet download datasheet BC858A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BC858A SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) FEATURES * Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 * Collector current ICM : -0.1 A * Collector-base voltage V(BR)CBO : -30 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
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