- di/dt Capability = 300 A/p.s _ Low On-State Voltage at High Current Levels - Shorted-Emitter. Center-Gate Design _ Low Thermal Resistance - Low Switching Losses ~.

Features: - di/dt Capability = 300 A/p.s _ Low On-State Voltage at High Current Levels - Shorted-Emitter. Center-Gat.

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