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RCA

S6431M Datasheet Preview

S6431M Datasheet

Thyristors

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File No. 247
CRlClBLJD
Solid State
Division
Thyristors
S6431M
Cathode Silicon Controlled Rectifier
for High-Current Pulse Applications
Features:
• Up to 900 Amperes Peak Forward Current Pulses
• 30 Wam Maximum Average Dissipation
• Forward Current of 35 Amperes (rms value)
• Shorted·E mitter Design
JEDEC T0-48
H·1601
a AII·Diffused Construction - Assures Exceptional Uniformity and Stability
• Direct Soldered Internal Construction - Assures Exceptional Resistance to
Fatigue
The S6431M (formerly RCA type 40216) is an all-diffused,
three-iunction silicon controlled rectifier (SCR) designed
especially for use in radar pulse modulators, inverters,
switching regulators, and other applications requiring a large
ratio of peak to average current.
It is especially constructed for rapid spread of forward cur-
rent over the full junction area to achieve a high rate of
change of forward current (di/dt) capability and low switch-
ing dissipation.
Abso/ute·Maximum Ratings
RATINGS
Transient Peak Reverse Voltage (Non-Repetitive), vRM
(non"'!'ep):' '" ••••••••••••••••••••••••••••••
Peak Reverse Voltage (Repetitive), vRM (rep) •••••••••••
Peak Forward Blocking Voltage (Repetitive), vFBOM
(rep)' •••••••••••••••••••••••.•..•.••••.•
Forward Current:
For CBse temperature of +650 C, RMS value, IFRMS
Peak Pulse Current (See Fig.7) ••••••••••••••••••••
Rate of Change of Forward Current, di/dt .•••••• 0" •••••
Dynamic Dissipation:
For case temperature of +650 c .................. .
Gat~o~:!:~~:case temperatures •••••••••••••••••••••
Peak, Forward or Reverse, for 10 ~s duration. PGM
(See Figs.lO and III ••••••••••••••••••••••••
Average, PGAV ••••••••••••••••••••••••••••
Temperature :
Storage, T stl! •••••••••••••••••••••••••••••••
Operating Wase), TC. • • • • • • • • •••••••••••••••••
CONTROLLED.RECTIFIER TYPE
S643tM
720
600
600
35
900
See Fig.7
30
See Fig.4
40
0.5
-65 to +150
-65 to +125
• Any values of peak gate current or peak gate voltage to give the maximum gate power is permissible.
UNITS
volts
volts
volts
amperes
amperes
watts
watts
watt
9-74 213




RCA

S6431M Datasheet Preview

S6431M Datasheet

Thyristors

No Preview Available !

S6431M
Characteristics at Maximum Ratings (unless otherwise specified),
and at Indicated Case Temperature (TC)
CHARACTERISTICS
CONTROLLEO.RECTIFIER TYPE
S6431M
Min.
Typ.
Max.
Fonvard Breakover Voltage, vBOO
At TC = +1250 C ••••••••••••••••••••••••••
InstantaneoU8 Blocking Current,
=At TC +1250 C
Forward, iFBO •••••••••••••••••••••••••
Reverse, iRaO ••••••••••." ••••••••••••••
Fonvard Voltage Drop, vF' •••••••••••••••••••••
DC Gate.Trigger Current, IGT' :
=At TC +250 C .(See Fig.lO) ••••••••••••••••••
DC Gate-Trigger Voltage, VGT'" :
At TC = +250 C (See Fig.lO) ••••••••••••••••••
Holding Current, iHOO":
=At TC +250 C •••••••••••••••••••••••••••
Critical Rate of Applied Forward Voltage, Critical
dv/dt'". ••••••••••• ••••••••••••••••••••••
=VFB vBQO (min. value). exponential rise, and
=TC +1250 C
(See waveahape of Fig.ll
Tum-On Time, tOD~', (Delay Time + Rise Time) ...••••••
= = =VFB vBOO (min. value), iF 30 A, IGT 200 mA,
O.11J8 min. rise time, and TC = +25° C
(See waveahapse of Fig.2)
Turn-Off Time, tofr". (Reverse Recovery Time + Gate
Recovery Time) • • • . . • • • • • • • • • • . • • • . • ••••••
iF = 18 A, 50 ",a pulse width, dVFB/dt = 20 VI",a,
= = =di"/dt 30 AI",a, IGT 200 mA, and TC +800 C
(See waveshapes of Fig.3)
Thennal Resistance, Junction...t,o.Case •.••••..•••.••
600
See Fig.5
25
1.1
0.5 20
20 50
1.25
15 20
10
10
80
2
70
40
2
File No. 247
UNITS
volts
mA
rnA
mA(dc)
volta(dc)
rnA
voltal
microsecond
microsecond
microseconds
OCIW
TYPICAL E.I CHARACTERISTIC OF SILICON
CONTROLLEO.RECTIFIER
CRITICAL dv/dt ~
,/
iRBO
...
214
92CS-13490
*~O.63 V~B
t= Re
92C5-I3365R1
Fig. '-Wsveshspe of critical d.,/dt raring test.


Part Number S6431M
Description Thyristors
Maker RCA
Total Page 5 Pages
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