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3DD167 - NPN Silicon Low Frequency High Power Transistor

Download the 3DD167 datasheet PDF. This datasheet also covers the 3DD164 variant, as both devices belong to the same npn silicon low frequency high power transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 1. Using triple-diffusion process. Excellent capacity in anti-burnout. Excellent second breakdown capacity. 2. Good temperature stability. Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for Low-speed switch,low frequency power amplify,power adjustment. 5. Quality Class: JP, JT, JCT, GS, G, G+.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (3DD164-QunliElectric.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 3DD167
Manufacturer Qunli Electric
File Size 32.95 KB
Description NPN Silicon Low Frequency High Power Transistor
Datasheet download datasheet 3DD167 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
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Other Datasheets by Qunli Electric

Part Number Description
3DD164 NPN Silicon Low Frequency High Power Transistor
3DD166 NPN Silicon Low Frequency High Power Transistor
3DD169 NPN Silicon Low Frequency High Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD164(166), 3DD167(169) NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for Low-speed switch,low frequency power amplify,power adjustment. 5. Quality Class: JP, JT, JCT, GS, G, G+ TECHNICAL DATA: Parameter name Symbols Unit Collector-Emitter Voltage VCEO V Collector-Emitter Breakdown Voltage V(BR)CEO V C-Base Breakdown Voltage V(BR)CBO V Emitter-Base Voltage Max. Collector Current Max.