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QPA2211D Datasheet 14 Watt GaN Power Amplifier

Manufacturer: Qorvo

General Description

QPA2211D 27.5 – 31 GHz 14 Watt GaN Amplifier (10 Pcs.) QPA2211DEVB03 Evaluation Board for QPA2211D Data Sheet Rev.

G, August 2022 | Subject to change without notice 1 of 22 www.qorvo.com QPA2211D ® 27.5 – 31 GHz 14 Watt GaN Power Amplifier Absolute Maximum Ratings Parameter Value / Range Drain Voltage (VD) 29.5 V Gate Voltage Range (VG) −5 V to 0 V Drain Current (ID) 5600 mA Gate Current (IG) See plot pg.

17 Power Dissipation (PDISS), 85 °C 40 W Input Power (PIN), 50 Ω, VD=22 V, IDQ=280 mA, 85 °C 36 dBm Input Power (PIN), 3:1 VSWR, VD=22 V, IDQ=280 mA, 85 °C 36 dBm Soldering Temperature (30 s, max.) 320 °C Storage Temperature −55 to +150 °C Operation

Overview

QPA2211D ® 27.5 – 31 GHz 14 Watt GaN Power Amplifier Product Overview Qorvo's QPA2211D is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15).

Operating between 27.5 and 31 GHz, it achieves 5 W linear power with −25 dBc intermodulation distortion products and 26 dB small signal gain.

Saturated output power is 14 W with power-added efficiency of 34%.

Key Features

  • Frequency Range: 27.5 .
  •  31 GHz.
  • PSAT (PIN=24 dBm): > 41.5 dBm.
  • PAE (PIN=24 dBm): > 34 %.
  • Power Gain (PIN=24 dBm): 17 dB.
  • IMD3 (at 34 dBm/tone): <.
  • 25 dBc.
  • Small Signal Gain: 26 dB.
  • Bias: VD = 22 V, IDQ = 280 mA.
  • Die Dimensions: 2.740 x 2.552 x 0.050 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. VG12 VG3 VD12 VD3.