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QPA0106 - 18W GaN Power Amplifier

General Description

1 -6 GHz GaN Power Amplifier 250 pcs.

Data Sheet Rev.

6.0 GHz 18 W GaN Power Amplifier Absolute Maximum Ratings Parameter Drain Voltage (VD) Value /

Key Features

  • Frequency Range: 1.
  • 6 GHz.
  • PSAT : 42.7 dBm (PIN = 19 dBm).
  • PAE: > 40% (PIN = 19 dBm).
  • Power Gain: 24 dB (PIN = 19 dBm).
  • Small Signal Gain: > 31 dB.
  • Bias: VD = 22 V, IDQ = 1022 mA.
  • Package Dimensions: 7.00 x 7.00 x 0.85 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram 48 47 46 45 44 43 42 41 40 39 38 37 1 2 3 4 5 6 7 8 9 1.

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Datasheet Details

Part number QPA0106
Manufacturer Qorvo
File Size 939.97 KB
Description 18W GaN Power Amplifier
Datasheet download datasheet QPA0106 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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QPA0106 ® 1.0 – 6.0 GHz 18 W GaN Power Amplifier Product Overview Qorvo’s QPA0106 is a wideband power amplifier fabricated using Qorvo’s QGaN25 0.25 um GaN on SiC production process. Covering 1 – 6 GHz, the QPA0106 typically provides 42.7 dBm of saturated output power and 24 dB of large-signal gain while achieving greater than 40 % poweradded efficiency. The QPA0106 can support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages. The QPA0106 is matched to 50 ohms with integrated DC blocking caps on both I/O ports.. The QPA0106 is packaged in a plastic overmolded 7 x 7 mm package. The QPA0106 is 100% DC and RF tested to ensure compliance to electrical specifications. Lead free and RoHS compliant.