HYB18T256161BF-28
Description
The 256-Mb DDR2 DRAM is a high-speed Double-Data-Rate-Two CMOS Synchronous DRAM device containing 268,435,456 bits and internally configured as a quad bank DRAM.
Key Features
- The 256-Mbit Double-Data-Rate-Two SDRAM offers the following key features
- Data masks (DM) for write data
- Posted CAS by programmable additive latency for better
- DRAM organizations with 16 data in/outputs mand and data bus efficiency
- Double Data Rate architecture
- Auto-Precharge operation for read and write bursts
- Auto-Refresh, Self-Refresh and power saving PowerDown modes
- Average Refresh Period 7.8 μs at a TCASE lower than 85°C
- Differential clock inputs (CK and CK)
- Full Strength and reduced Strength (60%) Data-Output Drivers data and center-aligned with write data
