HYB25D512160CE sdram equivalent, (hyb25d512xx0cx) ddr sdram.
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* Burst Lengths: 2, 4, or 8 CAS Latency: 2, 2.5, 3 Auto Precharge option for each burst access Auto .
Read and write accesses to the DDR SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an Active command, which is then fo.
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