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HYB18TC1G160BF Datasheet, Qimonda

HYB18TC1G160BF sdram equivalent, 1-gbit double-data-rate-two sdram.

HYB18TC1G160BF Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 3.54MB)

HYB18TC1G160BF Datasheet
HYB18TC1G160BF Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 3.54MB)

HYB18TC1G160BF Datasheet

Features and benefits

The 1-Gbit Double-Data-Rate-Two SDRAM offers the following key features:
* Off-Chip-Driver impedance adjustment (OCD) and On
* 1.8 V ± 0.1 V Power Supply 1.8 V ± .

Application

The device is designed to comply with all DDR2 DRAM key features: 1. Posted CAS with additive latency, 2. Write latency.

Description

latched at the cross point of differential clocks (CK rising and CK falling). All I/Os are synchronized with a single ended DQS or differential DQS-DQS pair in a source synchronous fashion. A 17 bit address bus for ×8 organised components and a 16 bi.

Image gallery

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TAGS

HYB18TC1G160BF
1-Gbit
Double-Data-Rate-Two
SDRAM
Qimonda

Manufacturer


Qimonda

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