QL78I6S-B-L, QL78I6S-A-L Datasheet - QSI

QL78I6S-B-L LASER DIODE

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL78I6S-A/B/C-L Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL78I6S-A/B/C-L AlGaAs Laser Diode Quantum Semiconductor International Co., Ltd. 2008-07-15 OVERVIEW QL78I6S-A/B/C-L is a MOCVD grown 780nm band AlGaAs laser diode with quantum well structure. It’s an attractive light source, with a typical l.

QL78I6S-B-L Features

* - Visible Light Output : λp = 785 nm - Optical Power Output : 25mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode

* ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode

QL78I6S-A-L-QSI.pdf