QL65O6S-B, QL65O6S-A Datasheet - QSI

QL65O6S-B LASER DIODE

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL65O6S-A/B/C Tentative Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL65O6S-A/B/C InGaAlP Laser Diode Tentative Quantum Semiconductor International Co., Ltd. Ver. 1 Aug. 2006 OVERVIEW QL65O6S-A/B/C is a MOCVD grown 660nm band InGaAlP laser diode with quantum well structure. It's an attractive light .

QL65O6S-B Features

* - Visible Light Output - Optical Power Output - Package Type : λp = 660 nm : 100mW CW, 250mW Pulse : TO-18 (5.6mmφ)

* ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3) Fig. 1 QL65O6SA Fig. 2 QL65

QL65O6S-A-QSI.pdf