QL65I7S-B-H, QL65I7S-A-H Datasheet - QSI

QL65I7S-B-H LASER DIODE

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL65I7S-A/B/C-H Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL65I7S-A/B/C-H InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd. Ver. 2 Mar.2012 OVERVIEW QL65I7S-A/B/C-H is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typ.

QL65I7S-B-H Features

* - Visible Light Output : λp = 658 nm(Typ.) - Optical Power Output : 35mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode

* ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD ca

QL65I7S-A-H-QSI.pdf