PPT8N30E2
PPT8N30E2 is Transistor manufactured by Prisemi.
Feature
This device is Pb-Free, Halogen Free/BFR Free and RoHS pliant.
- Very low collector to emitter saturation voltage
- DC current gain >100
- 3A continuous collector current
- PNP epitaxial planar silicon transistor
Mechanical Characteristics
- Lead finish:100% matte Sn(Tin)
- Mounting position: Any
- Qualified max reflow temperature:260℃
- Device meets MSL 1 requirements
- Pin flatness:≤3mil
PPT8N30E2 Transistor
8(C) 7(C) 6(C) 5(E)
1(C) 2(C) 3(C) 4(B)
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter -Base Breakdown Voltage Collector Current Collector Peak Current(1) Base...
