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Prisemi

PPT8N30E2 Datasheet Preview

PPT8N30E2 Datasheet

Transistor

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Feature
This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant.
Very low collector to emitter saturation voltage
DC current gain >100
3A continuous collector current
PNP epitaxial planar silicon transistor
Mechanical Characteristics
Lead finish:100% matte Sn(Tin)
Mounting position: Any
Qualified max reflow temperature:260
Device meets MSL 1 requirements
Pin flatness:≤3mil
PPT8N30E2
Transistor
8(C) 7(C) 6(C) 5(E)
1(C) 2(C) 3(C) 4(B)
Electrical characteristics per line@25( unless otherwise specified)
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter -Base Breakdown Voltage
Collector Current
Collector Peak Current(1)
Base Current
Base Peak Current
Total Dissipation @25°C(2)
Storage Temperature
Max. Operating Junction Temperature
Junction-to-Ambient Thermal Resistance(2)
Symbol
V (BR)CEO
V (BR)CBO
V (BR)EBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
RθJA
Conditions
IB=0 IC=-10mA
IE=0 IC=-100uA
IC=0 IE=-100uA
Value
-32
-48
-6
-3
-6
-0.2
-0.5
3.0
-65~150
150
42
Note 1: Pulse width=300μs, Duty Cycle<2%
Note 2: Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
Units
V
V
V
A
A
A
A
W
°C
°C
°C/ W
Rev.06.9
1 www.prisemi.com




Prisemi

PPT8N30E2 Datasheet Preview

PPT8N30E2 Datasheet

Transistor

No Preview Available !

Transistor
Absolute maximum rating@25
Parameter
Symbol
DC Current Gain
hFE
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
Collector Cut-off Current (IE=0)
Emitter Cut-off Current(IC=0)
VBE(sat)
ICBO
IEBO
Conditions
IC=-500mA,VCE=-3.0V
IC=-1A,VCE=-5V
IC=-0.5A,IB=-50mA
IC=-1.2A,IB=-20mA
IC=-2A,IB=-200mA
IC=-1A,IB=-50mA
IC=-2A,IB=-200mA
VCB=-30V
VCB=-30V TC=125°C
VEB=-5V
PPT8N30E2
Min.
150
100
-
-
-
Typ.
Max.
-
-0.18
-0.4
-0.6
-1.2
-1.5
-0.1
-20
-0.1
Units
-
V
V
μA
μA
Typical Characteristics
1400 COMMON
EMITTER
1200 Ta=25°C
1000
800
5 mA
4.5mA
4mA
3.5 mA
3mA
2.5mA
2mA
600 1.5mA
400 1mA
200
0
0
4
IB=0.5mA
8 12 16 20 22
Fig1.Collector-emitter voltage VCE (V)
110
80
60
40
20
00
0
25 50 75 100 125 150
Ambient Temperature - TA (°C)
Fig2. Power Derating Curve
Rev.06.9
2 www.prisemi.com


Part Number PPT8N30E2
Description Transistor
Maker Prisemi
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PPT8N30E2 Datasheet PDF






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