PPT8N30E2
Key Features
- Very low collector to emitter saturation voltage
- DC current gain >100
- 3A continuous collector current
- PNP epitaxial planar silicon transistor Mechanical Characteristics
- Lead finish:100% matte Sn(Tin)
- Mounting position: Any
- Qualified max reflow temperature:260℃
- Device meets MSL 1 requirements
