Datasheet Details
| Part number | PNMUT20V06 |
|---|---|
| Manufacturer | Prisemi |
| File Size | 137.75 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 PNMUT20V06 Datasheet
|
|
|
| Part number | PNMUT20V06 |
|---|---|
| Manufacturer | Prisemi |
| File Size | 137.75 KB |
| Description | N-Channel MOSFET |
| Datasheet |
PNMUT20V06 Datasheet
|
|
|
|
The enhancement mode MOS is extremely high density cell and low on-resistance.
VDS(V) 20 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.3@ VGS=4.5V 0.6 PNMUT20V06 N-Channel MOSFET D（3） G（1） S（2） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Symbol Conditions OFF CHARACTERISTICS BVDSS ID =250μA,VGS=0V IDSS VDS =20V,VGS=0V IGSS VDS =0V,VGS=±10V VGS(th) VDS =VGS, ID =250μA VGS=4.5V, ID =0.6A RDS(ON) VGS=2.5V, ID =0.5A VGS=1.8V, ID =0.35A DYNAMIC PARAMETERS CISS CDSS CRSS VGS=0V, VDS =16V, f=1MHz SWITCHING PARAMETERS td(on) td(off) VDS=10V, VGS =4.5V, RG=10Ω, ID =0.2A Min.
Typ.
Description The enhancement mode MOS is extremely high density cell and low on-resistance.
VDS(V) 20 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.3@ VGS=4.5V 0.
| Part Number | Description |
|---|---|
| PNM3FD20V1E | N-Channel MOSFET |
| PNM3FD20V1ELN | N-Channel MOSFET |
| PNM3FD20V1EMN | N-Channel MOSFET |
| PNM3FD20V1EN | N-Channel MOSFET |
| PNM3FD20V2 | N-Channel MOSFET |
| PNM523T201E0 | N-Channel MOSFET |
| PNM523T60V02 | N-Channel MOSFET |
| PNM523T703E0-2 | N-Channel MOSFET |
| PNM6N20V10E | N-Channel MOSFET |
| PNM6N30V12 | N-Channel MOSFET |