PNMTOF600V4 datasheet, mosfet equivalent, Prisemi

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Application

and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each cus.

Description

The enhancement mode MOS is extremely high density cell and low on-resistance. D（2） VDS(V) 600 MOSFET Product Summary RDS(on)(Ω) ID(A) 1.9@ VGS=10V 4 G（1） S（3） Electrical characteristics per line@25℃( unless otherwise specified) Parameter .

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