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PNMTOF600V4 Datasheet N-Channel MOSFET

Manufacturer: Prisemi

Download the PNMTOF600V4 datasheet PDF. This datasheet also includes the PNMTO600V4 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (PNMTO600V4-Prisemi.pdf) that lists specifications for multiple related part numbers.

General Description

The enhancement mode MOS is extremely high density cell and low on-resistance.

D（2） VDS(V) 600 MOSFET Product Summary RDS(on)(Ω) ID(A) 1.9@ VGS=10V 4 G（1） S（3） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Symbol Conditions OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Tran conductance Diode Forward Voltage Maximum Body-Diode Continuous Current Maximum Body-Diode Pulse Current BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM ID =250μA,VGS=0V VDS =600V,VGS=0V VDS =0V,VGS=±30V VDS =VGS, ID =250μA VGS=10V, ID =0.65A VDS =40V, ID =2A IS=1A,VGS=0V DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VGS=0V, VDS =25V, f=1MHz SWITCHING PARAMETERS Turn-On Delay Time Turn-Off Delay Time Turn-On Rise Time Turn-Off Fall Time td(on) td(off) tr tf VDS=300V, VGS =10V, RG=25Ω, ID =4A Min.

Typ.

Overview

PNMTO600V4 PNMTOF600V4 N-Channel MOSFET.

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