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PNMT7002E Datasheet Preview

PNMT7002E Datasheet

N-Channel MOSFET

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Description
The MOSFET provide the best combination of fast
switching , low on-resistance and cost-effectiveness.
Trench Power MV MOSFET technology
Voltage controlled small signal switch
Low input Capacitance
Fast Switching Speed
Low Input / Output Leakage
MOSFET Product Summary
VDS(V)
60
RDS(on)(Ω)
4@VGS = 10V
5@VGS = 5V
ID(A)
0.34
Applications
Battery operated systems
Solid-state relays
Direct logic-level interfaceTTL/CMOS
PNMT7002E
N-Channel MOSFET
Top View
Circuit Diagram
7002E
Absolute maximum rating@25
Rating
Drain-source Voltage
Gate-source Voltage
Drain Current
Pulsed Drain Current1)
Total Power Dissipation @ TA=25
Thermal Resistance Junction-to-Ambient @ Steady State2)
Junction and Storage Temperature Range
Notes
1) Pulse Test: Pulse Width≤300μs,Duty cycle ≤2%.
2) Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
Rev.06
1
Marking (Top View)
Symbol
VDS
VGS
ID
IDM
PD
RθJA
TJ,TSTG
Value
60
±20
115
1.5
200
215
-55~+150
Units
V
V
mA
A
mW
/W
www.prisemi.com




Prisemi

PNMT7002E Datasheet Preview

PNMT7002E Datasheet

N-Channel MOSFET

No Preview Available !

N-Channel MOSFET
PNMT7002E
Electrical characteristics per line@25(unless otherwise specified)
Parameter
Symbol
Conditions
Min. Typ. Max. Units
Static Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
BVDSS
IDSS
IGSS
VGS(th)
Static Drain-Source On-Resistance RDS(ON)
Diode Forward Voltage
Maximum Body-Diode Continuous
Current
Dynamic Parameters
VSD
IS
VGS = 0V, ID = 250μA
VDS = 60V,VGS = 0V
VGS = ±20V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 500mA
VGS = 5.0V, ID = 50mA
IS = 250mA,VGS = 0V
60 -
-V
- - 1 μA
- - ±1 μA
1 - 2.5 V
- 3.3 4.0
Ω
- 3.5 5.0
- - 1.0 V
- - 340 mA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Parameters
Total Gate Charge
Turn-on Delay Time
Turn-off Delay Time
Reverse recovery Time
Ciss - 18 -
Coss
VDS = 30V,VGS = 0V,
f = 1MHz
- 12 - pF
Crss - 7 -
Qg
tD(on)
tD(off)
trr
VGS = 10V,VDS = 30V,
ID = 0.3A
VGS = 10V,VDD = 30V,
ID = 300mA, RGEN = 6Ω
VGS = 0V,IS = 300mA,
VR = 25V, dIS/dt = - 100A/μs
-
-
-
-
1.7 2.4 nC
5-
ns
17 -
30 - ns
Rev.06
2 www.prisemi.com


Part Number PNMT7002E
Description N-Channel MOSFET
Maker Prisemi
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PNMT7002E Datasheet PDF






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