Description
The enhancement mode MOS is extremely high density cell and low on-resistance. VDS(V) 20 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.3@ VGS=4.5V 0.6 PNMET20V06 N-Channel MOSFET D（3） G（1） S（2） Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Symbol Conditions OFF CHARACTERISTICS BVDSS IDSS IGSS VGS(th) RDS(ON) ID =250μA,VGS=0V VDS =20V,VGS=0V VDS =0V,VGS=±8V VDS =VGS, ID =250μA VGS=4.5V, ID =0.6A VGS=2.5V, ID =0.5A VGS=1.8V, ID =0.35A DYNAMIC PARAMETERS CISS CDSS CRSS VGS=0V, VDS =16V, f=1MHz SWITCHING PARAMETERS td(on) td(off) VDS=10V, VGS =4.5V, RG=10Ω, ID =0.2A Min.
