Datasheet4U Logo Datasheet4U.com

PNMET20V06 - N-Channel MOSFET

Description

The enhancement mode MOS is extremely high density cell and low on-resistance.

📥 Download Datasheet

Datasheet preview – PNMET20V06

Datasheet Details

Part number PNMET20V06
Manufacturer Prisemi
File Size 141.39 KB
Description N-Channel MOSFET
Datasheet download datasheet PNMET20V06 Datasheet
Additional preview pages of the PNMET20V06 datasheet.

📁 Similar Datasheet

  • PNM - Precision Thin Film Non-Magnetic Resistor (Vishay)
  • PNM-2751L-R - MICROPHONE (Projects Unlimited)
  • PNM-3546L-R - MICROPHONE (Projects Unlimited)
  • PNM-5250L-R - MICROPHONE (Projects Unlimited)
  • PNM0402 - Precision Thin Film Non-Magnetic Resistor (Vishay)
  • PNM0502 - Precision Thin Film Non-Magnetic Resistor (Vishay)
  • PNM0505 - Precision Thin Film Non-Magnetic Resistor (Vishay)
  • PNM0603 - Precision Thin Film Non-Magnetic Resistor (Vishay)
  • PNM0705 - Precision Thin Film Non-Magnetic Resistor (Vishay)
  • PNM0805 - Precision Thin Film Non-Magnetic Resistor (Vishay)
Other Datasheets by Prisemi

Full PDF Text Transcription

Click to expand full text
Description The enhancement mode MOS is extremely high density cell and low on-resistance. VDS(V) 20 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.3@ VGS=4.5V 0.6 PNMET20V06 N-Channel MOSFET D（3） G（1） S（2） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Symbol Conditions OFF CHARACTERISTICS BVDSS IDSS IGSS VGS(th) RDS(ON) ID =250μA,VGS=0V VDS =20V,VGS=0V VDS =0V,VGS=±8V VDS =VGS, ID =250μA VGS=4.5V, ID =0.6A VGS=2.5V, ID =0.5A VGS=1.8V, ID =0.
Published: |