PNMET20V06 Overview
The enhancement mode MOS is extremely high density cell and low on-resistance. Drain Current 200 COss CRss 0 0 4 8 12 16 VDS Drain Source Voltage (V) Fig 4. Capacitance 20 2 .prisemi.
Datasheet Details
| Part number | PNMET20V06 |
|---|---|
| Datasheet | PNMET20V06-Prisemi.pdf |
| File Size | 141.39 KB |
| Manufacturer | Prisemi |
| Description | N-Channel MOSFET |
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