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PNM8P30V20 Datasheet Preview

PNM8P30V20 Datasheet

N-Channel MOSFET

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Description
The MOSFET provide the best combination of fast switching,
low on-resistance and cost-effectiveness.
VDS(V)
30
MOSFET Product Summary
RDS(on)(mΩ)
ID(A)
3.7@ VGS=4.5V
23
Top View (SOP-8)
S1
S2
S3
G4
8D
7D
6D
5D
PNM8P30V20
N-Channel 30-V(D-S) MOSFET
Internal Structure
D
G
S
Absolute maximum rating@25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Curren(TJ=150)
Pulsed Drain Current
TA=25
TA=70
Maximum Power Dissipation
TA=25
TA=70
Operating Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance-Junction to Ambient
Symbol
VDS
VGS
ID
IDM
PD
TJ
Symbol
RθJA
Typical
46
Maximum
30
±20
23
18
80
2.72
1.74
-55 to 150
Maximum
62.5
Units
V
V
A
A
W
Units
/W
Rev.06
1 www.prisemi.com




Prisemi

PNM8P30V20 Datasheet Preview

PNM8P30V20 Datasheet

N-Channel MOSFET

No Preview Available !

N-Channel 30-V(D-S) MOSFET
PNM8P30V20
Electrical characteristics per line@25( unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Drain-Source Diode Forward Voltage
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-On Fall Time
Gate-Resistance
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
VSD
Qg
Qg
Qgs
Qgd
CISS
COSS
CRSS
td(on)
td(off)
tr
tf
Rg
Conditions
ID =250μA,VGS=0V
VDS =20V,VGS=0V
VDS =0V,VGS=±20V
VDS =VGS, ID =250μA
VGS=10V, ID =15A
VGS=4.5V, ID =10A
VGS=0V,IS=15A
VGS=4.5V, VDS =15V,
ID =10A
VGS=10V, VDS =15V,
ID =10A
VGS=0V, VDS =15V,
f=1MHz
VDD =15V, VGEN =10V,
RG=1,RL=15
ID =1A
VGS=0V, VDS =0V,f=1MHz
Min.
30
-
-
1
-
-
-
-
-
-
-
-
-
Typ.
-
-
2.5
3.7
0.8
43
84
14
21
3880
690
225
27
85
20
18
1.5
Max.
-
1
±100
3
3.2
4.9
Units
V
μA
nA
V
m
V
nC
pF
pF
pF
ns
ns
ns
ns
Typical Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-50
0 50 100 150
TJ-Junction Temperature()
Fig 1. On Resistance vs. Junction Temperature
Rev.06
2
5
VGS=4.5V
4
3
VGS=2.5V
2
0 10 20 30 40 50 60
ID-Drain Current (A)
Fig 2. On-Resistance vs. Drain Current
70
www.prisemi.com


Part Number PNM8P30V20
Description N-Channel MOSFET
Maker Prisemi
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PNM8P30V20 Datasheet PDF






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