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PNM8P30V20 - N-Channel MOSFET

General Description

The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness.

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Datasheet Details

Part number PNM8P30V20
Manufacturer Prisemi
File Size 121.99 KB
Description N-Channel MOSFET
Datasheet download datasheet PNM8P30V20 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V) 30 MOSFET Product Summary RDS(on)(mΩ) ID(A) 3.7@ VGS=4.5V 23 Top View (SOP-8) S1 S2 S3 G4 8D 7D 6D 5D PNM8P30V20 N-Channel 30-V(D-S) MOSFET Internal Structure D G S Absolute maximum rating@25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Curren(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Maximum Power Dissipation TA=25℃ TA=70℃ Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Thermal Resistance-Junction to Ambient Symbol VDS VGS ID IDM PD TJ Symbol RθJA Typical 46 Maximum 30 ±20 23 18 80 2.72 1.74 -55 to 150 Maximum 62.5 Units V V A A W ℃ Units ℃/W Rev.06 1 www.prisemi.