The enhancement mode MOS is extremely high density cell and low on-resistance. VDS(V) MOSFET Product Summary RDS(on)(Ω) N-Channel 20 0.043@ VGS=4.5V P-Channel -20 0.08@ VGS=-4.5V ID(A) 3 -2.8 N-Channel Absolute maximum rating@25℃ Parameter .

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