* HiPerFETTM technology - low RDSon - low gate charge for high frequency operation - unclamped inductive switching (UIS) capability - dv/dt ruggedness - fast intrinsi.

Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 100 2.0 4 ±100 250 1 25 25 30 4500 1600 80.

PSHM06

PSHM120

PSHM40

PSH3018

PSH3027

PSH4028

PSH5018

PSH5028

PSH6022

PSHI06

PSHI100

PSHI25

PSHI50

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts