TC = 85 °C, 50-400 Hz (per phase) 180° sine, per thyristor t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sin.

(di/dt)cr TVJ = 125 °C repetitive, IT = 150 A f=50Hz, tP=200µs VD=2/3VDRM IG=0.5 A non repetitive,IT = ITAVM
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