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MITSUBISHI HVIGBT MODULES
CM1200HB-66H
HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE
CM1200HB-66H
q IC ................................................................ 1200A q VCES ....................................................... 3300V q Insulated Type q 1-element in a pack
APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57 ±0.25
190 171 57 ±0.25
57 ±0.25
6 - M8 NUTS C
C
C
C
G E
C
C
C
20
CM C
E
E
E
124 ±0.25 140
E
E
E
40
CIRCUIT DIAGRAM
E
G
20.25 41.25 3 - M4 NUTS 79.4 61.5 13 61.5 5.2 15 40 8 - φ7MOUNTING HOLES
38
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Feb.
CM1200HB-66H Datasheet
