Datasheet4U Logo Datasheet4U.com

CM100TU-12F - IGBT Module

Datasheet Summary

Description

Powerex IGBTMOD™ Modules are designed for use in switching applications.

Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode.

Features

  • Low Drive Power.
  • Low VCE(sat).
  • Discrete Super-Fast Recovery Free-Wheel Diode.
  • Isolated Baseplate for Easy Heat Sinking.

📥 Download Datasheet

Datasheet preview – CM100TU-12F

Datasheet Details

Part number CM100TU-12F
Manufacturer Powerex Power Semiconductors
File Size 137.79 KB
Description IGBT Module
Datasheet download datasheet CM100TU-12F Datasheet
Additional preview pages of the CM100TU-12F datasheet.

📁 Similar Datasheet

  • CM100TU-12F - IGBT Module (Mitsubishi Electric Semiconductor)
  • CM100TU-12H - IGBT Module (Mitsubishi Electric Semiconductor)
  • CM100TU-24F - IGBT Module (Mitsubishi Electric Semiconductor)
  • CM100TU-24H - IGBT Module (Mitsubishi Electric Semiconductor)
  • CM100TF-12H - IGBT Module (Mitsubishi Electric Semiconductor)
  • CM100TF-24H - IGBT Module (Mitsubishi Electric Semiconductor)
  • CM100TF-28H - IGBT Module (Mitsubishi Electric Semiconductor)
  • CM100TL-12NF - IGBT Module (Mitsubishi Electric)
  • CM100TL-24NF - IGBT Module (Mitsubishi Electric)
  • CM1000 - HIGH CURRENT SILICON BRIDGE RECTIFIERS (Pan Jit International Inc.)
Other Datasheets by Powerex Power Semiconductors

Full PDF Text Transcription

Click to expand full text
CM100TU-12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Six IGBTMOD™ 100 Amperes/600 Volts J S - NUTS (5 TYP) CM N K P K R T (4 TYP.) P GUP EUP GVP EVP GWP EWP L B E N L N L M Q TC MEASURING POINT TC MEASURING POINT GUN EUN GVN EVN GWN EWN U V W J L N D A W - THICK x X - WIDE TAB (12 PLACES) J L N L V H C F G P GUP RTC EUP U GUN RTC EUN N EVN GVN RTC EWN EVP V GWN RTC GVP RTC EWP W A GWP RTC Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode.
Published: |