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Powerex Power Semiconductors

CM100TU-12F Datasheet Preview

CM100TU-12F Datasheet

IGBT Module

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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100TU-12F
Trench Gate Design
Six IGBTMOD™
100 Amperes/600 Volts
S - NUTS (5 TYP)
J
K
K
R
CM
N
P
GUP EUP
GVP EVP
GWP EWP
T (4 TYP.)
P
BE
TC
MEASURING
POINT
LNLNL
M
GUN EUN
GVN EVN
GWN EWN
U VW
Q
TC
MEASURING
POINT
W - THICK x X - WIDE
TAB (12 PLACES)
JJ
LNLN
D
A
L
V
C
H
G
F
P
GUP
RTC
EUP
U
GUN
RTC
EUN
N
GVP
RTC
EVP
V
GVN
RTC
EVN
GWP
RTC
EWP
W
GWN
RTC
EWN
A
Outline Drawing and Circuit Diagram
Dimensions Inches
Millimeters
A 4.02 102.0
B 3.58 91.0
C 1.14 +0.04/-0.02 29.0 +1.0/-0.5
D
3.15±0.01
80.0±0.25
E
2.91±0.01
74.0±0.25
F 0.16
4.0
G 1.02
26.0
H 0.31
8.1
J 0.79 20.0
K 0.39 10.0
L 0.43 11.0
Dimensions
M
N
P
Q
R
S
T
U
V
W
X
Inches
0.47
0.75
0.74
1.55
0.05
M4
0.22 Dia.
0.02
0.12
0.02
0.110
Millimeters
11.85
19.1
18.7
39.3
1.25
M4
5.5 Dia.
0.5
3.05
0.5
2.79
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
UPS
Battery Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM100TU-12F is a
600V (VCES), 100 Ampere Six-
IGBT IGBTMOD™ Power Module.
Current Rating
Type Amperes
CM 100
VCES
Volts (x 50)
12
1




Powerex Power Semiconductors

CM100TU-12F Datasheet Preview

CM100TU-12F Datasheet

IGBT Module

No Preview Available !

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100TU-12F
Trench Gate Design Six IGBTMOD
100 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (Tc = 25°C)
Peak Collector Current (Tj 150°C)
Emitter Current**
Peak Emitter Current**
Maximum Collector Dissipation (Tj < 150°C)
Mounting Torque, M4 Main Terminal
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
Pc
Mounting Torque, M5 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
CM100TU-12F
-40 to 150
-40 to 125
600
±20
100
200*
100
200*
350
15
31
570
2500
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
ICES
I GES
VGE(th)
VCE(sat)
QG
VEC
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 10mA, VCE = 10V
IC = 100A, VGE = 15V, Tj = 25°C
IC = 100A, VGE = 15V, Tj = 125°C
VCC = 300V, IC = 100A, VGE = 15V
IE = 100A, VGE = 0V
5
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Typ.
6
1.6
1.6
620
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Max.
1
20
7
2.2
2.6
Units
mA
µA
Volts
Volts
Volts
nC
Volts
2


Part Number CM100TU-12F
Description IGBT Module
Maker Powerex Power Semiconductors
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CM100TU-12F Datasheet PDF






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