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Powerex Power Semiconductors

CM100TJ-12F Datasheet Preview

CM100TJ-12F Datasheet

IGBT Module

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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100TJ-12F
Trench Gate Design
Six IGBTMOD™
100 Amperes/600 Volts
F
19
A
D
E
NOT
CONNECTED
G
17
NOT
CONNECTED
18 16 15
H
U
BJ
Tc
L
20
21
S
T
M
N
12
34
P
5 6 7 8 9 10 11 12
R
Q
Y
X
C
14
K
13 Tc
L
VW
21
15
9
2 6 10
13
3
4
20
19
7
8
17
11
12
15
14
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
Inches
4.78
2.42
0.67
4.33±0.01
3.00
0.75
0.60
0.15
2.26
1.97±0.01
1.07
Millimeters
121.5
61.5
17.0
110.0±0.25
76.2
19.05
15.24
3.81
57.5
50.0±0.25
27.0
Dimensions
M
N
P
Q
R
S
T
U
V
W
X
Y
Inches
0.15
0.75
0.15
3.00
0.60
0.45
0.04
0.22 Dia.
0.12
0.81
3.72
4.62
Millimeters
3.81
19.05
3.81
76.2
15.24
1.15
1.0
5.5 Dia.
3.0
20.5
94.5
118.11
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
UPS
Battery Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM100TJ-12F is a
600V (VCES), 100 Ampere Six-
IGBT IGBTMOD™ Power Module.
Current Rating
Type Amperes
CM 100
VCES
Volts (x 50)
12
1




Powerex Power Semiconductors

CM100TJ-12F Datasheet Preview

CM100TJ-12F Datasheet

IGBT Module

No Preview Available !

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100TJ-12F
Trench Gate Design Six IGBTMOD™
100 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (Tc = 25°C)
Peak Collector Current (Tj 150°C)
Emitter Current (Tc = 25°C)**
Peak Emitter Current**
Maximum Collector Dissipation (Tj < 150°C) (Tc = 25°C)
Mounting Torque, M5 Mounting
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
Pc
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
CM100TJ-12F
-40 to 150
-40 to 125
600
±20
100
200*
100
200*
290
31
300
2500
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
ICES
IGES
VGE(th)
VCE(sat)
QG
VEC
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 10mA, VCE = 10V
IC = 100A, VGE = 15V, Tj = 25°C
IC = 100A, VGE = 15V, Tj = 125°C
VCC = 300V, IC = 100A, VGE = 15V
IE = 100A, VGE = 0V
5
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Typ.
6
1.6
1.6
620
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
Grams
Volts
Max.
1
20
7
2.2
2.6
Units
mA
µA
Volts
Volts
Volts
nC
Volts
2


Part Number CM100TJ-12F
Description IGBT Module
Maker Powerex Power Semiconductors
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