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Powerex Power Semiconductors

CM100TF-28H Datasheet Preview

CM100TF-28H Datasheet

IGBT Module

No Preview Available !

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100TF-28H
Six-IGBT IGBTMOD™
H-Series Module
100 Amperes/1400 Volts
Z - M5 THD
(7 TYP.)
J TYP
K
B
D
X QX QX N
BuP EuP
BvP EvP
BwP EwP
P BuN EuN
BvN EvN
BwN EwN
P
N
UVW
N
S
RL
P
CA
T GF
U
AA
W
M
M
E
AA Y - DIA.
(4 TYP.)
.110 TAB
HJ
P
BuP
EuP
u
BuN
EuN
N
V
BvP BwP
EvP EwP
vw
BvN
EvN
BwN
EwN
P
N
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
N
Inches
4.21
4.02
3.54±0.01
3.15±0.01
1.57
1.38
1.28
1.26 Max.
1.18
0.98
0.96
0.79
0.67
Millimeters
107.0
102.0
90.0±0.25
80.0±0.25
40.0
35.0
32.5
32.0 Max
30.0
25.0
24.5
20.0
17.0
Dimensions
P
Q
R
S
T
U
V
W
X
Y
Z
AA
Inches
0.57
0.55
0.47
0.43
0.39
0.33
0.30
0.24 Rad.
0.24
0.22
M5 Metric
0.08
Millimeters
14.5
14.0
12.0
11.0
10.0
8.5
7.5
Rad. 6.0
6.0
5.5
M5
2.0
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem-
bly and thermal management.
Features:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery
(135ns) Free-Wheel Diode
High Frequency Operation
(20-25kHz)
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Laser Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM100TF-28H
is a 1400V (VCES), 100 Ampere
Six-IGBT IGBTMOD™ Power
Module.
Type Current Rating
VCES
Amperes
Volts (x 50)
CM 100
28
355




Powerex Power Semiconductors

CM100TF-28H Datasheet Preview

CM100TF-28H Datasheet

IGBT Module

No Preview Available !

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100TF-28H
Six-IGBT IGBTMOD™ H-Series Module
100 Amperes/1400 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E-SHORT)
Gate-Emitter Voltage (C-E-SHORT)
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Pulse Current
Power Dissipation
Max. Mounting Torque M5 Terminal Screws
Tj
Tstg
VCES
VGES
IC
ICM
IEC
IECM
Pd
Max. Mounting Torque M5 Mounting Screws
Module Weight (Typical)
V Isolation
VRMS
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
Gate Leakage Current
ICES
IGES
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
VGE(th)
VCE(sat)
IC = 10mA, VCE = 10V
IC = 100A, VGE = 15V
IC = 100A, VGE = 15V, Tj = 150°C
Total Gate Charge
QG VCC = 800V, IC = 100A, VGS = 15V
Diode Forward Voltage
VFM
IE = 100A, VGS = 0V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Cies
Coes
Cres
td(on)
tr
td(off)
tf
trr
Qrr
VGE = 0V, VCE = 10V, f = 1MHz
VCC = 800V, IC = 100A,
VGE1 = VGE2 = 15V, RG = 3.1
IE = 100A, diE/dt = –200A/µs
IE = 100A, diE/dt = –200A/µs
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Rth(j-c)
Rth(j-c)
Rth(c-f)
Per IGBT
Per FWDi
Per Module, Thermal Grease Applied
356
CM100TF-28H
–40 to 150
–40 to 125
1400
±20
100
200*
100
200*
780
17
17
830
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Min. Typ. Max. Units
– – 1.0 mA
– – 0.5 µA
5.0 6.5 8.0 Volts
– 3.1 4.2** Volts
– 2.95 – Volts
– 510 –
nC
– – 3.8 Volts
Min. Typ. Max. Units
– – 20 nF
––
7 nF
––
4 nF
– – 250 ns
– – 400 ns
– – 300 ns
– – 500 ns
– – 300 ns
– 1.0 – µC
Min. Typ. Max. Units
– – 0.16 °C/W
– – 0.35 °C/W
– – 0.025 °C/W


Part Number CM100TF-28H
Description IGBT Module
Maker Powerex Power Semiconductors
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CM100TF-28H Datasheet PDF






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