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Powerex Power Semiconductors

CM100TF-12H Datasheet Preview

CM100TF-12H Datasheet

IGBT Module

No Preview Available !

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100TF-12H
Six-IGBT IGBTMOD™
H-Series Module
100 Amperes/600 Volts
Z - M4 THD
(7 TYP.)
P
D
G
N
UN
A
C
X QX QX
N
S
BuP EuP
BvP EvP
BwP EwP
BuN EuN
BvN EvN
BwN EwN
UVW
PP
GB
N
R
E
T KJ
W
AA
L
.110 TAB
M M AA
L
FH
Y DIA. (4 TYP.)
V
AB
BuP
P
EuP
BvP
EvP
BwP
EwP
P
BuN
EuN
u
N
BvN
EvN
v
BwN
EwN
w
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A
4.02±0.02
102±0.5
B 3.58±0.02 91.0±0.5
C 3.15±0.01 80.0±0.25
D 2.913±0.01 74.0±0.25
E 1.69 43.0
F 1.18+0.06/-0.02 30.0+1.5/-0.5
G 1.18 30.0
H 1.16 29.5
J 1.06 27.0
K 0.96 24.5
L 0.87 22.0
M 0.79 20.0
N 0.67 17.0
Dimensions
P
Q
R
S
T
U
V
W
X
Y
Z
AA
AB
Inches
0.65
0.55
0.47
0.43
0.39
0.33
0.32
0.24 Rad.
0.24
0.22 Dia.
M4 Metric
0.08
0.28
N
Millimeters
16.5
14.0
12.0
11.0
10.0
8.5
8.1
Rad. 6.0
6.0
Dia. 5.5
M4
2.0
7.0
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem-
bly and thermal management.
Features:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery
(70ns) Free-Wheel Diode
High Frequency Operation
(20-25kHz)
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Laser Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM100TF-12H
is a 600V (VCES), 100 Ampere
Six-IGBT IGBTMOD™ Power
Module.
Type Current Rating
VCES
Amperes
Volts (x 50)
CM 100
12
315




Powerex Power Semiconductors

CM100TF-12H Datasheet Preview

CM100TF-12H Datasheet

IGBT Module

No Preview Available !

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100TF-12H
Six-IGBT IGBTMOD™ H-Series Module
100 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Surge Current
Power Dissipation
Max. Mounting Torque M4 Terminal Screws
Tj
Tstg
VCES
VGES
IC
ICM
IF
IFM
Pd
Max. Mounting Torque M5 Mounting Screws
Module Weight (Typical)
V Isolation
VRMS
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
VGE(th)
IC = 10mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 100A, VGE = 15V
IC = 100A, VGE = 15V, Tj = 150°C
Total Gate Charge
QG VCC = 300V, IC = 100A, VGS = 15V
Diode Forward Voltage
VFM
IE = 100A, VGS = 0V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Cies
Coes
Cres
VGE = 0V, VCE = 10V, f = 1MHz
Resistive
Turn-on Delay Time
td(on)
Load
Switching
Rise Time
Turn-off Delay Time
tr
td(off)
VCC = 300V, IC = 100A,
VGE1 = VGE2 = 15V, RG = 6.3
Times
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
tf
trr IE = 100A, diE/dt = –200A/µs
Qrr IE = 100A, diE/dt = –200A/µs
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Rth(j-c)
Rth(j-c)
Per IGBT
Per FWDi
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
CM100TF-12H
–40 to 150
–40 to 125
600
±20
100
200*
100
200*
400
13
17
540
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Min. Typ. Max. Units
– – 1.0 mA
– – 0.5 µA
4.5 6.0 7.5 Volts
– 2.1 2.8** Volts
– 2.15 – Volts
– 300 –
nC
– – 2.8 Volts
Min. Typ. Max. Units
– – 10 nF
––
3.5 nF
––
2 nF
– – 120 ns
– – 300 ns
– – 200 ns
– – 300 ns
– – 110 ns
– 0.27 –
µC
Min. Typ. Max. Units
– – 0.31 °C/W
– – 0.70 °C/W
– – 0.033 °C/W
316


Part Number CM100TF-12H
Description IGBT Module
Maker Powerex Power Semiconductors
PDF Download

CM100TF-12H Datasheet PDF






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