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Powerex Power Semiconductors

CM100E3U-24H Datasheet Preview

CM100E3U-24H Datasheet

IGBT Module

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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100E3U-24H
Chopper IGBTMOD™
U-Series Module
100 Amperes/1200 Volts
N
P - NUTS
(3 PLACES)
.47 [12mm] DEEP
A
D
Q-
(2 PLACES)
BG
C2E1
E2
C1
HE
F
MK
K
J
T U T #110
TAB
S
C
L
R
C2E1
E2
G2
E2
C1
Outline Drawing and Circuit Diagram
Dimensions Inches
Millimeters
A 3.70 94.0
B 1.89 48.0
C 1.18 +0.04/-0.02 30.0 +1.0/-0.5
D
3.15±0.01
80.0±0.25
E 0.43 11.0
F 0.16
4.0
G 0.51
13.0
H 0.02
0.5
J 0.53 13.5
K 0.91 23.0
Dimensions
L
M
N
P
Q
R
S
T
U
Inches
0.84
0.67
0.28
M5
0.26 Dia.
0.02
0.30
0.63
0.98
Millimeters
21.2
17.0
7.0
M5
6.5 Dia.
4.0
7.5
16.0
25.0
Description:
Powerex Chopper IGBTMOD™
Modules are designed for use in
switching applications. Each module
consists of one IGBT Transistor
having a reverse-connected super-
fast recovery free-wheel diode and
an anode-collector connected super-
fast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking base-
plate, offering simplified system
assembly and thermal management.
Features:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
(15-20kHz)
Isolated Baseplate for Easy
Heat Sinking
Applications:
DC Motor Control
Boost Regulator
Ordering Information:
Example: Select the complete
module number you desire from the
table - i.e. CM100E3U-24H is a
1200V (VCES), 100 Ampere Chopper
IGBTMOD™ Power Module.
Current Rating
VCES
Type Amperes Volts (x 50)
CM 100
24
135




Powerex Power Semiconductors

CM100E3U-24H Datasheet Preview

CM100E3U-24H Datasheet

IGBT Module

No Preview Available !

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100E3U-24H
Chopper IGBTMOD™ U-Series Module
100 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM100E3U-24H
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (Tc = 25°C)
Peak Collector Current
Emitter Current** (Tc = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (Tc = 25°C, Tj 150°C)
Mounting Torque, M5 Main Terminal
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
Pc
-40 to 150
-40 to 125
1200
±20
100
200*
100
200*
650
31
Mounting Torque, M6 Mounting
– 40
Weight
– 310
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min. Typ. Max. Units
Collector-Cutoff Current
Gate Leakage Voltage
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
Emitter-Collector Voltage
ICES
IGES
VGE(th)
VCE(sat)
QG
VEC
VFM
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 10mA, VCE = 10V
IC = 100A, VGE = 15V, Tj = 25°C
IC = 100A, VGE = 15V, Tj = 125°C
VCC = 600V, IC = 100A, VGE = 15V
IE = 100A, VGE = 0V
IF = 100A, Clamp Diode Part
– –1
– – 0.5
4.5 6
7.5
– 2.9 3.7
– 2.85 –
– 375
– – 3.2
– – 3.2
mA
µA
Volts
Volts
Volts
nC
Volts
Volts
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Cies
Coes
Cres
td(on)
tr
td(off)
tf
trr
Qrr
trr
Qrr
VCE = 10V, VGE = 0V
VCC = 600V, IC = 100A,
VGE1 = VGE2 = 15V,
RG = 3.1, Resistive
Load Switching Operation
IE = 100A, diE/dt = -200A/µs
IE = 100A, diE/dt = -200A/µs
IF = 100A, Clamp Diode Part
diF/dt = -200A/µs
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min. Typ. Max. Units
– 15
nf
– – 5 nf
– – 3 nf
– 100
ns
– 200
ns
– 300
ns
– 350
ns
– 300
ns
0.55 –
µC
– 300
ns
0.55 –
µC
136


Part Number CM100E3U-24H
Description IGBT Module
Maker Powerex Power Semiconductors
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CM100E3U-24H Datasheet PDF






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