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Powerex Power Semiconductors

CM100BU-12H Datasheet Preview

CM100BU-12H Datasheet

IGBT Module

No Preview Available !

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100BU-12H
Four IGBTMOD™
U-Series Module
100 Amperes/600 Volts
A
B
FG
EH E
R
S 4 - Mounting
Holes
L
GuP
C EuP
D TC
Measured
Point
GvP
EvP
U
GuN
EuN
V
M
TC Measured
Point
P
GvN
EvN
Q
4 - M4 NUTS
JJ
EH
K
FG
VWV
L
N
0.110 - 0.5 Tab
T
U
X
P
GuP
EuP
U
GvP
EvP
V
GuN
EuN
N
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
Inches
2.83
2.17±0.01
3.58
2.91±0.01
0.43
0.79
0.69
0.75
0.39
0.41
0.05
Millimeters
72.0
55±0.25
91.0
74.0±0.25
11.0
20.0
17.5
19.1
10.0
10.5
1.25
GvN
EvN
Dimensions
M
N
P
Q
R
S
T
U
V
W
X
Inches
0.74
0.02
1.55
0.63
0.57
0.22 Dia.
0.32
1.02
0.59
0.20
1.61
Millimeters
18.7
0.5
39.3
16.0
14.4
5.5 Dia.
8.1
26.0
15.0
5.0
41.0
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of four IGBT Transistors in an
H-Bridge configuration, with each
transistor having a reverse-con-
nected super-fast recovery free-
wheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM100BU-12H is a
600V (VCES), 100 Ampere Four-
IGBT IGBTMOD™ Power Module.
Current Rating
VCES
Type Amperes Volts (x 50)
CM 100
12
71




Powerex Power Semiconductors

CM100BU-12H Datasheet Preview

CM100BU-12H Datasheet

IGBT Module

No Preview Available !

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100BU-12H
Four IGBTMOD™ U-Series Module
100 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM100BU-12H
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (Tc = 25°C)
Peak Collector Current (Tj 150°C)
Emitter Current** (Tc = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (Tc = 25°C)
Mounting Torque, M4 Main Terminal
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
Pc
-40 to 150
-40 to 125
600
±20
100
200*
100
200*
400
15
Mounting Torque, M5 Mounting
– 31
Weight
– 390
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
Gate Leakage Voltage
IGES
VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
VGE(th)
VCE(sat)
IC = 10mA, VCE = 10V
IC = 100A, VGE = 15V, Tj = 25°C
IC = 100A, VGE = 15V, Tj = 125°C
4.5
Total Gate Charge
QG
VCC = 300V, IC = 100A, VGE = 15V
Emitter-Collector Voltage*
VEC
IE = 100A, VGE = 0V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
Typ.
6
2.4
2.6
200
Max.
1
0.5
7.5
3.0
2.6
Units
mA
µA
Volts
Volts
Volts
nC
Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Cies
Output Capacitance
Coes
VCE = 10V, VGE = 0V
Reverse Transfer Capacitance
Cres
Resistive
Turn-on Delay Time
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
td(on)
tr
td(off)
tf
trr
Qrr
VCC = 300V, IC = 100A,
VGE1 = VGE2 = 15V,
RG = 6.3, Resistive
Load Switching Operation
IE = 100A, diE/dt = -200A/µs
IE = 100A, diE/dt = -200A/µs
Min. Typ. Max. Units
– – 8.8 nf
– – 4.8 nf
– – 1.3 nf
– 100
ns
– 250
ns
– 200
ns
– 300
ns
– 160
ns
0.24 –
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Rth(j-c)Q
Rth(j-c)D
Rth(c-f)
Per IGBT 1/4 Module
Per FWDi 1/4 Module
Per Module, Thermal Grease Applied
Min.
72
Typ.
0.025
Max.
0.31
0.7
Units
°C/W
°C/W
°C/W


Part Number CM100BU-12H
Description IGBT Module
Maker Powerex Power Semiconductors
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CM100BU-12H Datasheet PDF






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