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BS08D-112 - Silicon Bilateral Switch

Description

The BS08D bilateral switch is a silicon planar monolithic integrated circuit with the electrical characteristics of a bilateral thyristor.

The device is designed to switch at 7 to 9 volts with a 0.01%/°C temperature coefficient and have excellently matched characteristics in both directions.

Features

  • £ Low Switching Voltage of 7 to 9 Volts £ Excellent Switching Voltage Temperature Characteristics (0.01%/°C) £ High Reliability Devices £ Gate Electrode Facilitating Switching Operation Control and Synchronization.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 BS08D-112 BS08D-T112 Silicon Bilateral Switch OUTLINE DRAWING C B J A H D D GG F E ➀➁➂ CONNECTION DIAGRAM ➀ T2 TERMINAL ➁ GATE ➂ T1 TERMINAL Outline Drawing Dimensions Inches A 0.55 Min. B 0.12 Max. C 0.16 D 0.39 E 0.098 Max. F 0.016 G 0.05 ± 0.012 H 0.018 Millimeters 14.0 Min. 3.0 Max. 4.0 1.0 2.5 Max. 0.4 1.27 0.45 5/05 rev.2 Description: The BS08D bilateral switch is a silicon planar monolithic integrated circuit with the electrical characteristics of a bilateral thyristor. The device is designed to switch at 7 to 9 volts with a 0.01%/°C temperature coefficient and have excellently matched characteristics in both directions.
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