Datasheet4U Logo Datasheet4U.com

QID4515001 - HVIGBT Module

General Description

Powerex IGBTMOD™ Modules are designed for use in switching applications.

Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode.

Key Features

  •  Low VCE(sat)  Creepage and Clearance meet IEC 60077-1  High Isolation Voltage  Rugged SWSOA and RRSOA  Compact Industry Standard Package.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
QID0630006 Dual IGBT H-Series Hermetic Module (300 Amperes/600 Volts) Powerex Power Semiconductors

Other Datasheets by Powerex, Inc

Part Number Description
QID4515002 HVIGBT Module
QID0640020 IGBT Module
QID0660023 Dual IGBT Module
QID1210005 Split Dual Si/SiC Hybrid IGBT Module
QID1210006 Split Dual Si/SiC Hybrid IGBT Module

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID4515001 Dual IGBTMOD™ HVIGBT Module 150 Amperes/4500 Volts S NUTS (3TYP) A D FF J (2TYP) C 78 56 BE 1 23 H M H 4 G (3TYP) T (SCREWING DEPTH) R (DEEP) K (3TYP) L (2TYP) V (4TYP) U (5TYP) P Q N 41 5 6 2 8 73 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 5.51 140.0 B 2.87 73.0 C 1.89 48.0 D 4.88±0.01 124.0±0.25 E 2.24±0.01 57.0±0.25 F 1.18 30.0 G 0.43 11.0 H 1.07 27.15 J 0.20 5.0 K 1.65 42.0 Dimensions Inches Millimeters L 0.69±0.01 17.5±0.25 M 0.38 9.75 N 0.20 5.0 P 0.22 5.5 Q 1.44 36.5 R 0.16 4.0 S M6 Metric M6 T 0.63 Min. 16.0 Min. U 0.11 x 0.